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by Tanya Paskova

ePub Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices download
Author:
Tanya Paskova
ISBN13:
978-3527407682
ISBN:
3527407685
Language:
Publisher:
Wiley-VCH; 1 edition (March 31, 2008)
Category:
Subcategory:
Engineering
ePub file:
1226 kb
Fb2 file:
1887 kb
Other formats:
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Rating:
4.7
Votes:
371

153. Part III Nonpolar Heterostructures and Devices

John Wiley & Sons, 8 сент. 153. Part III Nonpolar Heterostructures and Devices. She is a referee for several prestigious physics journals and a member of PhD evaluation and workshop organization committees. Библиографические данные. Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices.

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MOCVD grown nonpolar nitride heterostructures and devices (A. Chakraborty . X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD. Matthieu Moret, Olivier Briot, Bernard Gil. Chakraborty, U. Mishra) 1. INTRODUCTION 1. Nonpolar nitride materials and devices: Recent developments and present trends (T. Paskova) PART A: GROWTH 2. Nonpolar GaN films grown by HVPE (B. Haskell, P. Fini, S. Nakamura) 3. Nonpolar GaN quasi-wafers sliced from quasi-boules grown by high pressure solution and HVPE (I. Grzegory, M. Bochkowski, B. Lucnik, H. Teisseyre, C. Skierbiszewski, S. Porowski) 4. Heteroepitaxial growth of nonpolar.

Nitrides with Nonpolar Surfaces traces the quest of utilizing the absence of electric fields in the nitride heterostructures with nonpolar surfaces for more efficient optoelectronic devices. Starting with growth optimizations, the understanding of new physical properties of nonpolar nitride materials led to significant improvement of material quality and device performance and to novel device concepts

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INTRODUCTION 1. Paskova)

INTRODUCTION 1. Paskova). PART B: PROPERTIES 7. GaN films and quantum wells with nonpolar surfaces: Optical polarization properties (H. T. Grahn) 8. Luminescence properties of nonpolar GaN (P. P. Paskov, B. Monemar) 9. Optical phonons in GaN with nonpolar orientations: Anisotropic lattice distortion, phonon splitting, phonon deformation potentials and strain-free frequencies (V. Darakchieva, T. Paskova, M. Schubert) 10.

GaN substrates for III-nitride devices. T Paskova, DA Hanser, KR Evans. Proceedings of the IEEE 98 (7), 1324-1338, 2009. John Wiley & Sons, 2008. Strain-related structural and vibrational properties of thin epitaxial AlN layers. V Darakchieva, J Birch, M Schubert, T Paskova, S Tungasmita, G Wagner,.

6. GaN films and quantum wells with nonpolar surfaces: Growth and structural properties (O. Brandt) PART B: PROPERTIES.

Weinheim : Wiley-VCH ;, c2008. 1. Paskova) PART A: GROWTH. 2. Nakamura). 6. 7. Grahn). 8. Monemar).

This is the first monograph to discuss in detail the current stage of development of nonpolar nitrides, with specific emphasis on the three main topics of crystal growth, properties and device studies. World-class researchers summarize their own recent achievements in their respective fields of expertise, covering both nonpolar and semipolar nitride materials. The bulk of the discussion in each chapter is related to the physical properties of the material obtained by the respective technique, in particular, defect density and properties of the defects in nonpolar nitrides. In addiiton, the optical and vibrational properties are also addressed in several chapters, as is progress in heterostructures, quantum wells and dots based on the AlGaN/GaN and the InGaN/GaN systems. Finally, an outlook of the application areas of the differently grown materials is presented in most chapters, together with the capabilities and limitations of the respective growth approaches used.