mostraligabue
» » Metal-oxide Semiconductor Field-effect Transistors and Integrated Circuits

ePub Metal-oxide Semiconductor Field-effect Transistors and Integrated Circuits download

by Paul Richman

ePub Metal-oxide Semiconductor Field-effect Transistors and Integrated Circuits download
Author:
Paul Richman
ISBN13:
978-0471720300
ISBN:
0471720305
Language:
Publisher:
John Wiley & Sons Inc; First Edition edition (December 1, 1973)
Category:
Subcategory:
Engineering
ePub file:
1713 kb
Fb2 file:
1819 kb
Other formats:
lrf lrf rtf doc
Rating:
4.9
Votes:
954

To get the free app, enter your mobile phone number.

uctor Field-Effect Transistor. Metal oxide semiconductor field effect transistor (MOSFET) sensors rely on a change of electrostatic potential. A MOSFET requires the following components: a thin semiconducting layer, which is separated from a gate electrode by the gate oxide dielectric, and source and drain electrodes of width W (channel width) separated by a distance L (channel length). From: Comprehensive Materials Processing, 2014. A MOSFET sensor comprises three layers – a silicon semiconductor, a silicon oxide insulator, and a catalytic metal (usually palladium, platinum, iridium, or rhodium), also called the gate.

Field-effect transistors, Integrated circuits, Metal oxide semiconductors.

The silicon metal oxide semiconductor field effect transistor (MOSFET) has emerged as the ubiquitous active element for silicon very large scale integration (VLSI) integrated circuits. The competitive drive for improved performance and cost reduction has resulted in the scaling of circuit elements to ever-smaller dimensions.

Semiconductor device - Semiconductor device - uctor field-effect transistors: The most important device for very-large-scale integrated circuits (those that contain more than 100,000 semiconductor devices such as diodes and transistors) is the uctor field-effect transistor (MOSFET). The most important device for very-large-scale integrated circuits (those that contain more than 100,000 semiconductor devices such as diodes and transistors) is the uctor field-effect transistor (MOSFET).

book by Paul Richman. MOS Field-Effect Transistors and Integrated Circuits.

By (author) Paul Richman. Dimensions 15. x 22. 6 x 2. mm 52. 3g. Publication date 01 Dec 1973. Publisher John Wiley and Sons Ltd. Imprint John Wiley & Sons Inc. Publication City/Country New York, United States.

Metal oxide semiconductors field-effect transistors, Metal oxide semiconductors, Transistor circuits. New York : McGraw-Hill. Books for People with Print Disabilities. Trent University Library Donation. Internet Archive Books.

Start by marking Mos Field Effect Transistors And Integrated Circuits as Want to Read . Metal-oxide Semiconductor Field-effect Transistors and Integrated Circuits.

Start by marking Mos Field Effect Transistors And Integrated Circuits as Want to Read: Want to Read savin. ant to Read. 0471720305 (ISBN13: 9780471720300).

field-effect transistor, such as a uctor field-effect transistor, or MOSFET ( see figure). Another type, the junction field-effect transistor, works in a similar fashion but is much less frequently used. The MOSFET consists of two regions: (1) the source (here shown connected to the silicon substrate) and (2) the drain of.